K4M56163PE-F1L Datasheet - Samsung

K4M56163PE-F1L 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on e.

K4M56163PE-F1L Features

* 1.8V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4M56163PE-F1L_Samsungsemiconductor.pdf