K4M561633G Datasheet - Samsung semiconductor

4M x 16Bit x 4 Banks Mobile SDRAM

K4M561633G Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www.DataSheet4U.com

K4M561633G General Description

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M561633G Datasheet (152.68 KB)

K4M561633G Datasheet Preview — Preview of K4M561633G PDF

Datasheet Details

Part number:

K4M561633G

Manufacturer:

Samsung semiconductor

File Size:

152.68 KB

Description:

4m x 16bit x 4 banks mobile sdram.

📁 Related Datasheet

K4M56163LG 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4M56163PE-F1L 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

K4M56163PE-F90 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

K4M56163PE-R 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

K4M56163PE-RG 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

K4M56163PG 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4M563233D 8Mx32 Mobile SDRAM 90FBGA (Samsung)

K4M563233E 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)

K4M563233G 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)

K4M56323LE 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)

TAGS

K4M561633G 16Bit Banks Mobile SDRAM Samsung semiconductor

Image Gallery

K4M561633G Features

K4M561633G General Description

Datasheet Details

File Size:

Description:

K4M561633G Distributor