K4M561633G 4M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4M561633G
Manufacturer: Samsung semiconductor
File Size: 152.68 KB
Datasheet: K4M561633G_Samsungsemiconductor.pdf
Description: 4M x 16Bit x 4 Banks Mobile SDRAM

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www. DataSheet4U. com

Applications

* ORDERING INFORMATION Part No. K4M561633G-R(B)N/G/L/F75 K4M561633G-R(B)N/G/L/F1H K4M561633G-R(B)N/G/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)L/F

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K4M561633G 16Bit Banks Mobile SDRAM Samsung semiconductor

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