K4M561633G - 4M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Datasheet Details

Part number	K4M561633G
Manufacturer	Samsung semiconductor
File Size	152.68 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M561633G_Samsungsemiconductor.pdf

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www. DataSheet4U. com.
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Functi.

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Published: Jun 25, 2008 |