K4M561633G Datasheet - Samsung semiconductor

K4M561633G, 4M x 16Bit x 4 Banks Mobile SDRAM

K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Details

Part number:

K4M561633G

Manufacturer:

Samsung semiconductor

File Size:

152.68 KB

Description:

4M x 16Bit x 4 Banks Mobile SDRAM

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www. DataSheet4U. com

Applications

* ORDERING INFORMATION Part No. K4M561633G-R(B)N/G/L/F75 K4M561633G-R(B)N/G/L/F1H K4M561633G-R(B)N/G/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)L/F

K4M561633G Distributors

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K4M561633G 16Bit Banks Mobile SDRAM Samsung semiconductor

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