K4S56323LF-FL Datasheet, Sdram, Samsung semiconductor

K4S56323LF-FL Features

  • Sdram
  • VDD/VDDQ = 2.5V/2.5V
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2

PDF File Details

Part number:

K4S56323LF-FL

Manufacturer:

Samsung semiconductor

File Size:

170.16kb

Download:

📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram. The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

Datasheet Preview: K4S56323LF-FL 📥 Download PDF (170.16kb)
Page 2 of K4S56323LF-FL Page 3 of K4S56323LF-FL

K4S56323LF-FL Application

  • Applications ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H K4S56323LF-F(H)E

TAGS

K4S56323LF-FL
32Bit
Banks
Mobile
SDRAM
Samsung semiconductor

📁 Related Datasheet

K4S56323LF-FC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHE - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHL - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHN - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHR - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHS - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FN - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FR - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts