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K4S64163LH-RN, K4S64163LH-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S64163LH-RN Description

K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high p.

K4S64163LH-RN Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

K4S64163LH-RN Applications

* ORDERING INFORMATION Part No. K4S64163LH-R(B)E/N/G/C/L/F75 K4S64163LH-R(B)E/N/G/C/L/F1H K4S64163LH-R(B)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 FBGA Leaded(Lead Free) Interface Package - R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S64163LH-RN, K4S64163LH-RE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S64163LH-RN, K4S64163LH-RE
Manufacturer
Samsung semiconductor
File Size
141.86 KB
Datasheet
K4S64163LH-RE_Samsungsemiconductor.pdf
Description
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Note
This datasheet PDF includes multiple part numbers: K4S64163LH-RN, K4S64163LH-RE.
Please refer to the document for exact specifications by model.

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16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor
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