K4S64163LH-RBE, K4S64163LH-RE Datasheet - Samsung semiconductor

K4S64163LH-RBE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every cl.

K4S64163LH-RBE Features

* 2.5V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4S64163LH-RE_Samsungsemiconductor.pdf

K4S64163LH-RBE Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S64163LH-RBE, K4S64163LH-RE. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S64163LH-RBE, K4S64163LH-RE

Manufacturer:

Samsung semiconductor

File Size:

141.86 KB

Description:

1m x 16bit x 4 banks mobile sdram in 54fbga.

Note:

This datasheet PDF includes multiple part numbers: K4S64163LH-RBE, K4S64163LH-RE.
Please refer to the document for exact specifications by model.

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TAGS

K4S64163LH-RBE K4S64163LH-RE 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor

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