K4S64163LH-RE_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S64163LH-RBE, K4S64163LH-RE
Manufacturer:
Samsung semiconductor
File Size:
141.86 KB
Description:
1m x 16bit x 4 banks mobile sdram in 54fbga.
Note:
This datasheet PDF includes multiple part numbers: K4S64163LH-RBE, K4S64163LH-RE.
Please refer to the document for exact specifications by model.
The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every cl
K4S64163LH-RBE Features
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad
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