K4S64163LH-RBE Datasheet, 54fbga, Samsung semiconductor

K4S64163LH-RBE Features

• 54fbga
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

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Part number:

K4S64163LH-RBE

Manufacturer:

Samsung semiconductor

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141.86kb

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📄 Datasheet

Description:

1m x 16bit x 4 banks mobile sdram in 54fbga. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with

K4S64163LH-RBE Application

• Applications ORDERING INFORMATION Part No. K4S64163LH-R(B)E/N/G/C/L/F75 K4S64163LH-R(B)E/N/G/C/L/F1H K4S64163LH-R(B)E/N/G/C/L/F1L Max Freq. 133MHz

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K4S64163LH-RBE

Samsung semiconductor

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