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K4S511632M Datasheet, Samsung semiconductor

K4S511632M Datasheet, Samsung semiconductor

K4S511632M

datasheet Download (Size : 111.71KB)

K4S511632M Datasheet

K4S511632M sdram equivalent, 512mbit sdram.

K4S511632M

datasheet Download (Size : 111.71KB)

K4S511632M Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

ORDERING INFORMATION Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTION.

Description

The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system c.

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K4S511632M Page 1 K4S511632M Page 2 K4S511632M Page 3

TAGS

K4S511632M
512Mbit
SDRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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