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K4S561633F-F1H Datasheet, Samsung semiconductor

K4S561633F-F1H Datasheet, Samsung semiconductor

K4S561633F-F1H

datasheet Download (Size : 114.04KB)

K4S561633F-F1H Datasheet

K4S561633F-F1H 54boc equivalent, 4m x 16bit x 4 banks mobile sdram in 54boc.

K4S561633F-F1H

datasheet Download (Size : 114.04KB)

K4S561633F-F1H Datasheet

Features and benefits


* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

Application

ORDERING INFORMATION Part No. K4S561633F-X(Z)E/N/G/C/L/F75 K4S561633F-X(Z)E/N/G/C/L/F1H K4S561633F-X(Z)E/N/G/C/L/F1L M.

Description

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

Image gallery

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TAGS

K4S561633F-F1H
16Bit
Banks
Mobile
SDRAM
54BOC
Samsung semiconductor

Manufacturer


Samsung semiconductor

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