K4S563233FHN 90fbga equivalent, 2m x 32bit x 4 banks mobile sdram in 90fbga.
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.
ORDERING INFORMATION
Part No. K4S563233F-F(H)E/N/G/C/L/F60 K4S563233F-F(H)E/N/G/C/L/F75 K4S563233F-F(H)E/N/G/C/L/F1H K.
The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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