K4S640832H-UCL75, K4S641632H-UC60 - 64Mb H-die SDRAM Specification 54 TSOP-II

Samsung semiconductor

K4S640832H-UCL75 Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S640832H-UCL75, K4S641632H-UC60. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	K4S640832H-UCL75, K4S641632H-UC60
Manufacturer	Samsung semiconductor
File Size	146.34 KB
Description	64Mb H-die SDRAM Specification 54 TSOP-II
Datasheet	K4S641632H-UC60_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4S640832H-UCL75, K4S641632H-UC60. Please refer to the document for exact specifications by model.

K4S640832H-UCL75 Product details

Description

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

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Other Datasheets by Samsung semiconductor

K4S640832H-UC75 - 64Mb H-die SDRAM Specification 54 TSOP-II
K4S640832H-L75 - 64Mb H-die SDRAM Specification
K4S640832H-TC75 - 64Mb H-die SDRAM Specification
K4S640832H-TL75 - 64Mb H-die SDRAM Specification
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K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Published: Mar 5, 2010 |