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K5A3240YBC-T855 Datasheet - Samsung semiconductor

Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

K5A3240YBC-T855 Features

* Power Supply voltage : 2.7V to 3.3V

* Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16 bit

* Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns

* Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Progr

K5A3240YBC-T855 General Description

The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM. The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit. The memory architecture of flash memory .

K5A3240YBC-T855 Datasheet (867.47 KB)

Preview of K5A3240YBC-T855 PDF

Datasheet Details

Part number:

K5A3240YBC-T855

Manufacturer:

Samsung semiconductor

File Size:

867.47 KB

Description:

Multi-chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram.
K5A3x40YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F.

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TAGS

K5A3240YBC-T855 Multi-Chip Package MEMORY 32M Bit 4Mx8 2Mx16 Dual Bank NOR Flash Memory 4M512Kx8 256Kx16 Full CMOS SRAM Samsung semiconductor

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