* Fast Access Time 12, 15, 20ns(Max.)
* Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) Operating K6E0808C1C-12 : 165mA(Max.) K6E0808C1C-15 : 150mA(Max.) K6E0808C1C-20 : 140mA(Max.)
* Single 5.0V±10% Power Supply
* TTL Compatible Inputs and Outputs
K6E0808C1C Datasheet (168.09 KB)
K6E0808C1C
Samsung semiconductor
168.09 KB
32kx8 bit high speed cmos static ram.
PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev..
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