K6F1616T6B-EF55 ram equivalent, 1m x16 bit super low power and low voltage full cmos static ram.
* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs .
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data .
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