K6F1616T6B-F Datasheet, RAM, Samsung semiconductor

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K6F1616T6B-F Features and benefits

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs .

K6F1616T6B-F Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data .

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