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K6F1616T6B Datasheet, Samsung semiconductor

K6F1616T6B Datasheet, Samsung semiconductor

K6F1616T6B

datasheet Download (Size : 199.14KB)

K6F1616T6B Datasheet

K6F1616T6B ram

1m x16 bit super low power and low voltage full cmos static ram.

K6F1616T6B

datasheet Download (Size : 199.14KB)

K6F1616T6B Datasheet

K6F1616T6B Features and benefits

K6F1616T6B Features and benefits


* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs .

K6F1616T6B Description

K6F1616T6B Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data .

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TAGS

K6F1616T6B
x16
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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