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K6F1616U6A - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Datasheet Summary

Description

The K6F1616U6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-7.50x9.50 CMOS SRAM.

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Datasheet preview – K6F1616U6A

Datasheet Details

Part number K6F1616U6A
Manufacturer Samsung semiconductor
File Size 142.35 KB
Description 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F1616U6A Datasheet
Additional preview pages of the K6F1616U6A datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com K6F1616U6A Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - added 45ns product - changed ICC1 : 3mA to 2mA - changed ICC2 : 38mA to 30mA for 55ns product 30mA to 25mA for 70ns product Revise - Deleted 45ns product Draft Date September 11, 2001 January 4, 2002 Remark Preliminary Final 1.1 September 11, 2002 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.
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