Datasheet4U Logo Datasheet4U.com

K6F1616U6M - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Datasheet Summary

Description

The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output.
  • Package Type: 48-TBGA-9.00x12.00 CMOS SRAM.

📥 Download Datasheet

Datasheet preview – K6F1616U6M

Datasheet Details

Part number K6F1616U6M
Manufacturer Samsung semiconductor
File Size 156.62 KB
Description 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F1616U6M Datasheet
Additional preview pages of the K6F1616U6M datasheet.

📁 Similar Datasheet

  • K6F1008R2M - SRAM (Samsung Electronics)
  • K6F1008S2M - SRAM (Samsung Electronics)
  • K6F1008V2M - SRAM (Samsung Electronics)
  • K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)
Other Datasheets by Samsung semiconductor
  • K6F1616U6A - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1616U6C - 16Mb(1M x 16 bit) Low Power SRAM
  • K6F1616R6A - CMOS SRAM
  • K6F1616R6C - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1616T6B - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1616T6B-EF55 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1616T6B-EF70 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1616T6B-F - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Preliminary K6F1616U6M Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Change package type : from FBGA to TBGA Draft Date August 22, 2000 November 21, 2000 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.1 November 2000 Preliminary K6F1616U6M Family FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.
Published: |