K6F1616U6M Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K6F1616U6M
Datasheet	K6F1616U6M_Samsungsemiconductor.pdf
File Size	156.62 KB
Manufacturer	Samsung Semiconductor
Description	1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616U6M Overview

The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6F1616U6M Key Features

Process Technology: Full CMOS
Organization: 1M x16
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three state output
Package Type: 48-TBGA-9.00x12.00

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number	Description
K6F1616U6A	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6C	16Mb(1M x 16 bit) Low Power SRAM
K6F1616R6A	CMOS SRAM
K6F1616R6C	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF70	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Datasheet Details

K6F1616U6M Overview

K6F1616U6M Key Features

More Datasheets from Samsung Semiconductor

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