K6F1616U6M Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.3V
- Low Data Retention Voltage: 1.5V(Min)
- Three state output
- Package Type: 48-TBGA-9.00x12.00
- Part: K6F1616U6M
- Manufacturer: Samsung Semiconductor
- Size: 156.62 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1616U6A | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616U6C | 16Mb(1M x 16 bit) Low Power SRAM |
| K6F1616R6A | CMOS SRAM |
| K6F1616R6C | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F1616U6M Description
The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.