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K6F1616U6M - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F1616U6M 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616U6M

Datasheet Details

Part number	K6F1616U6M
Manufacturer	Samsung semiconductor
File Size	156.62 KB
Description	1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F1616U6M Datasheet
Additional preview pages of the K6F1616U6M datasheet.

Product details

Description

The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 2.7~3.3V.
Low Data Retention Voltage: 1.5V(Min).
Three state output.
Package Type: 48-TBGA-9.00x12.00 CMOS SRAM.

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Published: Jan 27, 2007 |