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K6F1616U6M Datasheet 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Manufacturer: Samsung Semiconductor

General Description

The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Overview

www.DataSheet4U.com Preliminary K6F1616U6M Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.

History 0.0 0.1 Initial draft Revise - Change package type : from FBGA to TBGA Draft Date August 22, 2000 November 21, 2000 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output.
  • Package Type: 48-TBGA-9.00x12.00 CMOS SRAM.