K6F1616U6M Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.3V
- Low Data Retention Voltage: 1.5V(Min)
- Three state output
- Package Type: 48-TBGA-9.00x12.00
- Part: K6F1616U6M
- Description: 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
- Manufacturer: Samsung Semiconductor
- Size: 156.62 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1616U6A | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616U6C | 16Mb(1M x 16 bit) Low Power SRAM |
| K6F1616R6A | CMOS SRAM |
| K6F1616R6C | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |