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K6R1008C1C-I12 Datasheet, Samsung semiconductor

K6R1008C1C-I12 Datasheet, Samsung semiconductor

K6R1008C1C-I12

datasheet Download (Size : 131.65KB)

K6R1008C1C-I12 Datasheet

K6R1008C1C-I12 ranges. equivalent, 128kx8 bit high-speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges..

K6R1008C1C-I12

datasheet Download (Size : 131.65KB)

K6R1008C1C-I12 Datasheet

Features and benefits


* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating K6R1008C1C-10 : 80mA(M.

Application

The K6R1008C1C is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1C-C10/C12/C1.

Description

The K6R1008C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R1008C1C-I12 Page 1 K6R1008C1C-I12 Page 2 K6R1008C1C-I12 Page 3

TAGS

K6R1008C1C-I12
128Kx8
Bit
High-Speed
CMOS
Static
RAM5V
Operating.
Operated
Commercial
and
Industrial
Temperature
Ranges.
Samsung semiconductor

Manufacturer


Samsung semiconductor

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