Part K6R1008V1D
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Manufacturer Samsung Semiconductor
Size 181.85 KB
K6R1008V1D Datasheet (PDF) Download
Samsung Semiconductor
K6R1008V1D

Overview

  • Fast Access Time 8,10ns(Max.)
  • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max.)
  • Single 3.3±0.3V Power Supply
  • TTL Compatible Inputs and Outputs
  • Fully Static Operation - No Clock or Refresh required
  • Three State Outputs
  • Center Power/Ground Pin Configuration
  • Standard Pin Configuration K6R1008V1D-J : 32-SOJ-400 K6R1008V1D-T : 32-T
K6R1008V1D datasheet preview

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