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K6R1008V1D Datasheet, Samsung semiconductor

K6R1008V1D Datasheet, Samsung semiconductor

K6R1008V1D

datasheet Download (Size : 181.85KB)

K6R1008V1D Datasheet

K6R1008V1D ranges. equivalent, 64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges..

K6R1008V1D

datasheet Download (Size : 181.85KB)

K6R1008V1D Datasheet

Features and benefits


* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max..

Application

The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM(3..

Description

The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R1008V1D Page 1 K6R1008V1D Page 2 K6R1008V1D Page 3

TAGS

K6R1008V1D
64Kx16
Bit
High-Speed
CMOS
Static
RAM3.3V
Operating
Operated
Commercial
and
Industrial
Temperature
Ranges.
Samsung semiconductor

Manufacturer


Samsung semiconductor

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