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K6R1008V1D - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Datasheet Summary

Description

The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 8,10ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R1008V1D-08: 80mA(Max. ) K6R1008V1D-10: 65mA(Max. ).
  • Single 3.3±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.
  • Standard Pin Configuration K6R1008V1D-J : 32-SOJ-400 K6R1008V1D-T : 32-TSOP2-400CF.

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Datasheet Details

Part number K6R1008V1D
Manufacturer Samsung semiconductor
File Size 181.85 KB
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Datasheet download datasheet K6R1008V1D Datasheet
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Full PDF Text Transcription

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PRELIMINARY K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. for AT&T CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA Remark Preliminary Preliminary Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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