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K6R1008V1D - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1008V1D Description

PRELIMINARY K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges..
The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

K6R1008V1D Features

* Fast Access Time 8,10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R1008V1D-08: 80mA(Max. ) K6R1008V1D-10: 65mA(Max. )
* Single 3.3±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No

K6R1008V1D Applications

* The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) PIN CONFIGURATION(Top View) A0 A1 A2 A3 CS I/O1 I/O2 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 29 A13 28 OE 27 I/O8 26 I/O7 FUNCTIONAL BLOCK DIAGRAM Vcc Vss SOJ/

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Datasheet Details

Part number
K6R1008V1D
Manufacturer
Samsung semiconductor
File Size
181.85 KB
Datasheet
K6R1008V1D_Samsungsemiconductor.pdf
Description
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

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64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor
Samsung semiconductor K6R1008V1D-like datasheet