K6R1008V1B-I - 128Kx8 Bit High Speed Static RAM
The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG′s advan
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History Rev No.
Rev.
0.0 Rev.1.0 History Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1.
Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1.
Delete Preliminary.
2.2.
Delete 32-SOJ-300 package.
2.3.
Add Capacitive load of the
K6R1008V1B-I Features
* Fast Access Time 8,10,12ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K6R1008V1B-10 : 155mA(Max.) K6R1008V1B-12 : 150mA(Max.)
* Single 3.3±0.3V Power Supply
* TTL Compati
