K6R1008V1B-I Datasheet, Ram, Samsung semiconductor

K6R1008V1B-I Features

• Ram
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K

PDF File Details

Part number:

K6R1008V1B-I

Manufacturer:

Samsung semiconductor

File Size:

153.80kb

Download:

📄 Datasheet

Description:

128kx8 bit high speed static ram. The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8

K6R1008V1B-I Application

• Applications The K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008V1B-C8/C10/C12 K6R1008V1B-I8/

TAGS

K6R1008V1B-I

Samsung semiconductor

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