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K6R1008V1B-I

128Kx8 Bit High Speed Static RAM

K6R1008V1B-I Datasheet (153.80 KB)

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Datasheet Details

Part number:

K6R1008V1B-I

Manufacturer:

Samsung semiconductor

File Size:

153.80 KB

Description:

128kx8 bit high speed static ram.
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary .

K6R1008V1B-I Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K6R1008V1B-10 : 155mA(Max.) K6R1008V1B-12 : 150mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compati

K6R1008V1B-I General Description

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

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TAGS

K6R1008V1B-I 128Kx8 Bit High Speed Static RAM Samsung semiconductor

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