K6R1008V1B-I, K6R1008V1B-C Datasheet - Samsung semiconductor

K6R1008V1B-I 128Kx8 Bit High Speed Static RAM

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Add Capacitive load of the .

K6R1008V1B-I Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max.) K6R1008V1B-10 : 155mA(Max.) K6R1008V1B-12 : 150mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compati

K6R1008V1B-C_Samsungsemiconductor.pdf

K6R1008V1B-I Datasheet Preview — This datasheet PDF includes multiple part numbers: K6R1008V1B-I, K6R1008V1B-C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K6R1008V1B-I, K6R1008V1B-C

Manufacturer:

Samsung semiconductor

File Size:

153.80 KB

Description:

128kx8 bit high speed static ram.

Note:

This datasheet PDF includes multiple part numbers: K6R1008V1B-I, K6R1008V1B-C.
Please refer to the document for exact specifications by model.

K6R1008V1B-I Distributor

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K6R1008V1B-I K6R1008V1B-C 128Kx8 Bit High Speed Static RAM Samsung semiconductor