* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max.)
* Single 3.3±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No
K6R1008V1D Datasheet (181.85 KB)
K6R1008V1D
Samsung semiconductor
181.85 KB
64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges..
PRELIMINARY
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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