K6R1008V1D Datasheet, ranges. equivalent, Samsung semiconductor

K6R1008V1D Features

• Ranges.
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max.)

PDF File Details

Part number:

K6R1008V1D

Manufacturer:

Samsung semiconductor

File Size:

181.85kb

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📄 Datasheet

Description:

64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.. The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8

K6R1008V1D Application

• Applications The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)

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