K6R1008V1D Datasheet - Samsung semiconductor

K6R1008V1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s adva.

PRELIMINARY K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. for AT&T CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA Re.

K6R1008V1D Features

* Fast Access Time 8,10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No

K6R1008V1D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6R1008V1D

Manufacturer:

Samsung semiconductor

File Size:

181.85 KB

Description:

64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges..

K6R1008V1D Distributor

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K6R1008V1D K6R1008V1D 64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor