K6R1008V1D - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG ′s adva
PRELIMINARY K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
for AT&T CMOS SRAM Revision History Rev.
No.
Rev.
0.0 Rev.
0.1 Rev.
0.2 Rev.
1.0 History Initial document.
Speed bin modify Current modify 1.
Delete 12ns speed bin.
2.
Change Icc for Industrial mode.
Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA Draft Data May.
11.
2001 June.
18.
2001 September.
9.
2001 December.
18.
2001 Current 90mA 75mA Re
K6R1008V1D Features
* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1008V1D-08: 80mA(Max.) K6R1008V1D-10: 65mA(Max.)
* Single 3.3±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No
