• Part: K7A803609A
  • Description: 256Kx36 & 512Kx18 Synchronous SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 395.05 KB
K7A803609A Datasheet (PDF) Download
Samsung Semiconductor
K7A803609A

Overview

The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter.

  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.