K7A801809A - 256Kx36 & 512Kx18 Synchronous SRAM

Samsung semiconductor

📥 Download Datasheet

K7A801809A Datasheet Preview — Preview of K7A801809A PDF

Datasheet Details

Part number: K7A801809A
Manufacturer: Samsung semiconductor
File Size: 395.05 KB
Datasheet: K7A801809A_Samsungsemiconductor.pdf
Description: 256Kx36 & 512Kx18 Synchronous SRAM

K7A801809A Product details

Description

The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Powe.

📁 Related Datasheet

K7A161830B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
K7A163630B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
K7A403600M - 128K x 36 Synchronous SRAM (Samsung)
K7A50D - TK7A50D (Toshiba Semiconductor)
K7A60W - TK7A60W (Toshiba)
K7A65D - Silicon N-Channel MOSFET (Toshiba)

📌 All Tags

256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

Samsung semiconductor K7A801809A-like datasheet

K7A801809B - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A801800B - 256K x 36 & 512K x 18 Synchronous SRAM
K7A801801M - 256Kx36 & 512Kx18 Synchronous SRAM
K7A803600B - 256K x 36 & 512K x 18 Synchronous SRAM
K7A803601M - 256Kx36 & 512Kx18 Synchronous SRAM
K7A803609A - 256Kx36 & 512Kx18 Synchronous SRAM

K7A801809A Stock/Price