K7A801809A Datasheet - Samsung semiconductor

K7A801809A 256Kx36 & 512Kx18 Synchronous SRAM

The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counte.

K7A803609A K7A801809A Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 1.0 History Initial draft 1. Final spec Release. Draft Date May. 24 . 2000 July. 03. 2000 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questi.

K7A801809A Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for

K7A801809A_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K7A801809A

Manufacturer:

Samsung semiconductor

File Size:

395.05 KB

Description:

256kx36 & 512kx18 synchronous sram.

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K7A801809A K7A801809A 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

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