K7A801809A Datasheet - Samsung semiconductor

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K7A801809A 256Kx36 & 512Kx18 Synchronous SRAM

K7A803609A K7A801809A Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium an.

K7A801809A_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K7A801809A

Manufacturer:

Samsung semiconductor

File Size:

395.05 KB

Description:

256Kx36 & 512Kx18 Synchronous SRAM

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V+0.165V/-0.165V for

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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K7A801809A 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

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