K7A803601M Datasheet (Samsung semiconductor) - 256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M, 256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.

No.

History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.

0.2 Remove 119BGA Package Type.

0.3 Change DC Characteristics.

ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA