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K7A801801M, K7A803601M Datasheet - Samsung semiconductor

K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA.

K7A803601M-Samsungsemiconductor.pdf

This datasheet PDF includes multiple part numbers: K7A801801M, K7A803601M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

K7A801801M, K7A803601M

Manufacturer:

Samsung semiconductor

File Size:

462.46 KB

Description:

256kx36 & 512kx18 synchronous sram.

Note:

This datasheet PDF includes multiple part numbers: K7A801801M, K7A803601M.
Please refer to the document for exact specifications by model.

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K7A801801M K7A803601M 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

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