Datasheet4U Logo Datasheet4U.com

K7A801801M Datasheet - Samsung semiconductor

K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA.

K7A801801M Datasheet (462.46 KB)

Preview of K7A801801M PDF
K7A801801M Datasheet Preview Page 2 K7A801801M Datasheet Preview Page 3

Datasheet Details

Part number:

K7A801801M

Manufacturer:

Samsung semiconductor

File Size:

462.46 KB

Description:

256kx36 & 512kx18 synchronous sram.

📁 Related Datasheet

K7A801800B 256K x 36 & 512K x 18 Synchronous SRAM (Samsung semiconductor)

K7A801809A 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)

K7A801809B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM (Samsung semiconductor)

K7A803600B 256K x 36 & 512K x 18 Synchronous SRAM (Samsung semiconductor)

K7A803601M 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)

K7A803609A 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)

K7A803609B 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM (Samsung semiconductor)

K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM (Samsung semiconductor)

TAGS

K7A801801M 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

K7A801801M Distributor