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K7K1618T2C Datasheet 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Manufacturer: Samsung Semiconductor

Overview: K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

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K7K1618T2C 512kx36 & 1mx18 ddrii cio b2 sram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7K1618T2C
Manufacturer	Samsung Semiconductor
File Size	440.53 KB
Description	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
Download	K7K1618T2C Download (PDF)

Key Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V.
Pipelined, double-data rate operation.
Common data input/output bus.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed late write.
Read latency : 2 clock cycles.
Registered address, control and data input/o.

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