K7R320884M - 1M x 36 & 2M x 18 QDR II b4 SRAM

This page provides the datasheet information for the K7R320884M, a member of the K7R321884M 1M x 36 & 2M x 18 QDR II b4 SRAM family.

Datasheet Summary

Description

0.3 1.

Update current characteristics in DC electrical characteristics 2.

Change AC timing characteristics 3.

Samsung semiconductor

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Datasheet Details

Part number	K7R320884M
Manufacturer	Samsung semiconductor
File Size	202.00 KB
Description	1M x 36 & 2M x 18 QDR II b4 SRAM
Datasheet	K7R320884M Datasheet
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Full PDF Text Transcription

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K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm 0.2 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved pin for high density name change from NC to Vss/SA 5. Delete AC test condition about Clock Input timing Reference Level 6. Delete clock description on page 2 and add HSTL I/O comment 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 0.4 1. Add -FC25 part(AC Characteristics) 2.

Published: Nov 23, 2017 |