K8S6415EBB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

Samsung semiconductor

Datasheet Details

is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B.

Single Voltage, 1.7V to 1.95V for Read and Write operations.
Organization - 4,194,304 x 16 bit ( Word Mode Only).
Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15.
Read While Program/Erase Operation.
Multiple Bank Architecture - 16 Banks (4Mb Partition).
OTP Block : Extra 256Byte block.
Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www. DataSheet4U. com 90ns (54MHz) / 80ns (66MHz) - Sy.

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