K8S6415EBB Datasheet | Samsung Semiconductor

K8S6415ET(B)B FLASH MEMORY Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 Initial Issue Draft Date October 20, 2004 Remark Revision March 22, 2005 - Specification finalized - Add the requirement and note of Quadruple word program operation Bottom boot block description is added January 09,2006 .. Revision 1.1 January, 2006 K8S6415ET(B)B Features - Single Voltage, 1.7V to 1.95V for Read and Write operations - Organization - 4,194,304 x 16 bit ( Word Mode Only) - Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 - Read While Program/Erase Operation -...