K9F1G08D0M Datasheet - Samsung semiconductor

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9F1G08D0M Features

* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Registe

K9F1G08D0M General Description

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and .

K9F1G08D0M Datasheet (790.90 KB)

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Datasheet Details

Part number:

K9F1G08D0M

Manufacturer:

Samsung semiconductor

File Size:

790.90 KB

Description:

128m x 8 bit / 64m x 16 bit nand flash memory.
www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND.

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K9F1G08D0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor

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K9F1G08D0M Features

K9F1G08D0M General Description

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