Datasheet4U Logo Datasheet4U.com

K9F1G08Q0A Datasheet - Samsung semiconductor

FLASH MEMORY

K9F1G08Q0A Features

* Voltage Supply -1.8V device(K9F1G08Q0A): 1.70V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V

* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program

K9F1G08Q0A General Description

Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte page and an erase operation can be performed in typical 2.

K9F1G08Q0A Datasheet (736.82 KB)

Preview of K9F1G08Q0A PDF

Datasheet Details

Part number:

K9F1G08Q0A

Manufacturer:

Samsung semiconductor

File Size:

736.82 KB

Description:

Flash memory.
www.DataSheet4U.com K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History.

📁 Related Datasheet

K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K9F1G08Q0M-PCB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-PIB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-YCB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08Q0M-YIB0 1Gb 1.8V NAND Flash Errata (Samsung)

K9F1G08B0C FLASH MEMORY (Samsung)

K9F1G08D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)

K9F1G08R0A 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory (Samsung semiconductor)

K9F1G08R0B FLASH MEMORY (Samsung Electronics)

K9F1G08U0A FLASH MEMORY (Samsung semiconductor)

TAGS

K9F1G08Q0A FLASH MEMORY Samsung semiconductor

Image Gallery

K9F1G08Q0A Datasheet Preview Page 2 K9F1G08Q0A Datasheet Preview Page 3

K9F1G08Q0A Distributor