K9F1G08Q0M datasheet, memory equivalent, Samsung semiconductor

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K9F1G08Q0M Features and benefits

* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell A.

K9F1G08Q0M Application

such as solid state file storage and other portable applications requiring non-volatility. 3 www.DataSheet4U.com K9F1.

K9F1G08Q0M Description

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112.

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