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K9F4G08U0M Datasheet, Samsung semiconductor

K9F4G08U0M Datasheet, Samsung semiconductor

K9F4G08U0M

datasheet Download (Size : 1.11MB)

K9F4G08U0M Datasheet

K9F4G08U0M memory equivalent, 512m x 8 bits / 1g x 8 bits nand flash memory.

K9F4G08U0M

datasheet Download (Size : 1.11MB)

K9F4G08U0M Datasheet

Features and benefits


* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - P.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64.

Image gallery

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TAGS

K9F4G08U0M
512M
Bits
Bits
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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