K9F4G08U0A Datasheet, Samsung semiconductor

* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - P.

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64.