Datasheet4U Logo Datasheet4U.com

K9F4G08U0B

FLASH MEMORY

K9F4G08U0B Features

* Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K

K9F4G08U0B General Description

Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid st ate application market. A progr am operation can be performed in typical 200 µs on the (2K+64)B.

K9F4G08U0B Datasheet (1.19 MB)

Preview of K9F4G08U0B PDF

Datasheet Details

Part number:

K9F4G08U0B

Manufacturer:

Samsung

File Size:

1.19 MB

Description:

Flash memory.
K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND.

📁 Related Datasheet

K9F4G08U0A - (K9xxG08UxA) FLASH MEMORY (Samsung semiconductor)
.. K9K8G08U1A K9F4G08U0A Preliminary FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.

K9F4G08U0D - 4Gb D-die NAND Flash (Samsung)
..net Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell) data.

K9F4G08U0E - 4Gb E-die NAND Flash (Samsung)
SAMSUNG CONFIDENTIAL Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E 4Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SA.

K9F4G08U0F - 4Gb F-die NAND Flash (Samsung)
SAMSUNG CONFIDENTIAL Rev. 1.2, Jul. 2016 K9F4G08U0F K9K8G08U0F K9WAG08U1F 4Gb F-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRO.

K9F4G08U0M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory (Samsung semiconductor)
K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI.

K9F4G08U1M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory (Samsung semiconductor)
.. K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revisi.

K9F4G08B0B - FLASH MEMORY (Samsung)
K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND.

K9F4008W0A-TCB0 - 512K x 8 bit NAND Flash Memory (Samsung semiconductor)
K9F3208W0A-TCB0, K9F3208W0A-TIB0 Document Title 4M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 Initial issu.

TAGS

K9F4G08U0B FLASH MEMORY Samsung

Image Gallery

K9F4G08U0B Datasheet Preview Page 2 K9F4G08U0B Datasheet Preview Page 3

K9F4G08U0B Distributor