Datasheet Details
Part number:
K9F4G08U0B, K9K8G08U1B
Manufacturer:
Samsung
File Size:
1.19 MB
Description:
Flash memory.
Note:
This datasheet PDF includes multiple part numbers: K9F4G08U0B, K9K8G08U1B.
Please refer to the document for exact specifications by model.
K9F4G08U0B, K9K8G08U1B, FLASH MEMORY
Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit.
The device is offered in 2.7V and 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid st ate application market.
A progr am operation can be performed in typical 200 µs on the (2K+64)B
K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRU ED AS GR ANTING ANY EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, LICENSE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
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K9F4G08U0B Features
* Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K
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