K9F4G08U0A - (K9xxG08UxA) FLASH MEMORY

Samsung semiconductor

Datasheet Details

Part number	K9F4G08U0A
Manufacturer	Samsung semiconductor
File Size	1.18 MB
Description	(K9xxG08UxA) FLASH MEMORY
Datasheet	K9F4G08U0A_Samsungsemiconductor.pdf

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit.

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Multiplexed I/.

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Published: Jan 22, 2008 |