K9F4G08U0A Datasheet - Samsung semiconductor

(K9xxG08UxA) FLASH MEMORY

K9F4G08U0A Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K + 64)Byte

K9F4G08U0A General Description

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

K9F4G08U0A Datasheet (1.18 MB)

K9F4G08U0A Datasheet Preview — Preview of K9F4G08U0A PDF

Datasheet Details

Part number:

K9F4G08U0A

Manufacturer:

Samsung semiconductor

File Size:

1.18 MB

Description:

(k9xxg08uxa) flash memory.
www.DataSheet4U.com K9K8G08U1A K9F4G08U0A Preliminary FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.

📁 Related Datasheet

K9F4G08U0B FLASH MEMORY (Samsung)

K9F4G08U0D 4Gb D-die NAND Flash (Samsung)

K9F4G08U0E 4Gb E-die NAND Flash (Samsung)

K9F4G08U0F 4Gb F-die NAND Flash (Samsung)

K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory (Samsung semiconductor)

K9F4G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory (Samsung semiconductor)

K9F4G08B0B FLASH MEMORY (Samsung)

K9F4008W0A-TCB0 512K x 8 bit NAND Flash Memory (Samsung semiconductor)

K9F4008W0A-TIB0 512K x 8 bit NAND Flash Memory (Samsung semiconductor)

K9F1208B0B 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)

TAGS

K9F4G08U0A K9xxG08UxA FLASH MEMORY Samsung semiconductor

Image Gallery

K9F4G08U0A Features

K9F4G08U0A General Description

Datasheet Details

File Size:

Description:

K9F4G08U0A Distributor