K9F4G08U0A Datasheet (Samsung semiconductor)

K9F4G08U0A, (K9xxG08UxA) FLASH MEMORY

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed

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For up

K9F4G08U0A Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K + 64)Byte