Description
K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND.
Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit.
Features
* Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K
Applications
* w here Product fai lure could resu lt in lo ss of life or person al or physical harm, or any milit ary or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without not