K9F4G08B0B, K9K8G08U1B - FLASH MEMORY

Samsung

Datasheet Details

Part number	K9F4G08B0B, K9K8G08U1B
Manufacturer	Samsung
File Size	1.19 MB
Description	FLASH MEMORY
Datasheet	K9K8G08U1B-Samsung.pdf
Note	This datasheet PDF includes multiple part numbers: K9F4G08B0B, K9K8G08U1B. Please refer to the document for exact specifications by model.

Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit.

Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Published: May 26, 2014 |