K9F4G08B0B Datasheet - Samsung

FLASH MEMORY

K9F4G08B0B Features

* Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K

K9F4G08B0B General Description

Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid st ate application market. A progr am operation can be performed in typical 200 µs on the (2K+64)B.

K9F4G08B0B Datasheet (1.19 MB)

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Datasheet Details

Part number:

K9F4G08B0B

Manufacturer:

Samsung

File Size:

1.19 MB

Description:

Flash memory.
K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND.

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K9F4G08B0B FLASH MEMORY Samsung

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K9F4G08B0B Features

K9F4G08B0B General Description

Datasheet Details

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Description:

K9F4G08B0B Distributor