K9F4G08U1M, K9F4G08U0M Datasheet - Samsung semiconductor

K9F4G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance www.DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you h.

K9F4G08U1M Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K

K9F4G08U0M_Samsungsemiconductor.pdf