K9F4G08U1M, K9F4G08U0M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung semiconductor

Datasheet Details

Part number	K9F4G08U1M, K9F4G08U0M
Manufacturer	Samsung semiconductor
File Size	1.11 MB
Description	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Datasheet	K9F4G08U0M_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K9F4G08U1M, K9F4G08U0M. Please refer to the document for exact specifications by model.

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Mult.

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Published: May 18, 2006 |