K9F4G08U1M Datasheet - Samsung semiconductor

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9F4G08U1M Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K

K9F4G08U1M General Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

K9F4G08U1M Datasheet (1.11 MB)

K9F4G08U1M Datasheet Preview — Preview of K9F4G08U1M PDF

Datasheet Details

Part number:

K9F4G08U1M

Manufacturer:

Samsung semiconductor

File Size:

1.11 MB

Description:

512m x 8 bits / 1g x 8 bits nand flash memory.
www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revisi.

📁 Related Datasheet

K9F4G08U0A (K9xxG08UxA) FLASH MEMORY (Samsung semiconductor)

K9F4G08U0B FLASH MEMORY (Samsung)

K9F4G08U0D 4Gb D-die NAND Flash (Samsung)

K9F4G08U0E 4Gb E-die NAND Flash (Samsung)

K9F4G08U0F 4Gb F-die NAND Flash (Samsung)

K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory (Samsung semiconductor)

K9F4G08B0B FLASH MEMORY (Samsung)

K9F4008W0A-TCB0 512K x 8 bit NAND Flash Memory (Samsung semiconductor)

K9F4008W0A-TIB0 512K x 8 bit NAND Flash Memory (Samsung semiconductor)

K9F1208B0B 64M x 8 Bit NAND Flash Memory (Samsung semiconductor)

TAGS

K9F4G08U1M 512M Bits Bits NAND Flash Memory Samsung semiconductor

Image Gallery

K9F4G08U1M Features

K9F4G08U1M General Description

Datasheet Details

File Size:

Description:

K9F4G08U1M Distributor