K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung semiconductor

Description

K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI.
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.

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Datasheet Specifications

Part number: K9F4G08U0M
Manufacturer: Samsung semiconductor
File Size: 1.11 MB
Datasheet: K9F4G08U0M_Samsungsemiconductor.pdf
Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Features

* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
* Page Read Operation - Page Size : (2K + 64)Byte

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. 1

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K9F4G08U0M 512M Bits Bits NAND Flash Memory Samsung semiconductor

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