K9F4G08U0M Datasheet, Memory, Samsung semiconductor

K9F4G08U0M Features

• Memory
• Voltage Supply - 2.70V ~ 3.60V
• Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase - Page

PDF File Details

Part number:

K9F4G08U0M

Manufacturer:

Samsung semiconductor

File Size:

1.11MB

Download:

📄 Datasheet

Description:

512m x 8 bits / 1g x 8 bits nand flash memory. Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective

K9F4G08U0M Application

• Applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governm

TAGS

K9F4G08U0M

Samsung semiconductor

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