K9F4008W0A-TCB0 Datasheet - Samsung semiconductor

K9F4008W0A-TCB0 512K x 8 bit NAND Flash Memory

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences ~ 2.5V Draft Date April 10th 1998 April 10th 1999 Remark Advance.

K9F3208W0A-TCB0, K9F3208W0A-TIB0 Document Title 4M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 Initial issue. Data Sheet, 1999 1. Added CE don’t care mode during the data-loading and reading 0.2 1. Revised real-time map-out algorithm(refer to technical notes) 2. Removed erase suspend/resume mode 1. Changed device name - KM29W32000AT -> K9F3208W0A-TCB0 - KM29W32000AIT -> K9F3208W0A-TIB0 1. Changed invalid block(s) marking method prior to shipping - The i.

K9F4008W0A-TCB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG El

K9F4008W0A-TCB0 Datasheet (558.38 KB)