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K9HCG08U1D Datasheet 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory

Manufacturer: Samsung Semiconductor

Download the K9HCG08U1D datasheet PDF. This datasheet also includes the K9LBG variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9LBG-08U0D.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet.co.kr K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D Preliminary FLASH MEMORY K9XXG08UXD INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE.

Key Features

  • Voltage Supply - 3.3V Device : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
  • Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
  • K9XDG08U5D: 50ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Program time : 800µs(.