• Part: K9HCG08U1D
  • Description: 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 1.68 MB
K9HCG08U1D Datasheet (PDF) Download
Samsung Semiconductor
K9HCG08U1D

Description

Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit.

Key Features

  • Voltage Supply - 3.3V Device : 2.7V ~ 3.6V
  • Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K +
  • Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte
  • Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) *K9XDG08U5D: 50ns(Min.)
  • Memory Cell : 2bit / Memory Cell
  • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : TBD Cycles(with TBD ECC) - Data Retention : TBD Years
  • mand Register Operation