K9HCG08U1D Datasheet PDF - Samsung semiconductor 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory Specs

K9HCG08U1D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory

This page provides the datasheet information for the K9HCG08U1D, a member of the K9LBG 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory family.

Datasheet Summary

Description

Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit.

The device is offered in 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

Voltage Supply - 3.3V Device : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
K9XDG08U5D: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(.

Datasheet Details

Part number	K9HCG08U1D
Manufacturer	Samsung semiconductor
File Size	1.68 MB
Description	4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Datasheet	K9HCG08U1D Datasheet
Additional preview pages of the K9HCG08U1D datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D Preliminary FLASH MEMORY K9XXG08UXD INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Oct 20, 2011 |