K9HBG08U1M Datasheet, Memory, Samsung Electronics

✔ K9HBG08U1M Features

Voltage Supply : 2.7 V ~ 3.6 V
Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit
Automatic Program and Erase - Page Progr

where Product failure could result in loss of life or personal or physical harm, or any military or defense

Samsung Electronics manufacturer logo

K9HBG08U1M

Samsung Electronics

1.11 MB

Flash memory. Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective

📁 Related Datasheet

K9HAG08U1M - Flash Memory (Samsung)

K9HCG08U1D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)

K9HCG08U1E - 16Gb E-die NAND Flash (Samsung)

K9HCG08U1M - FLASH MEMORY (Samsung Electronics)

K9HCG08U5D - FLASH MEMORY (Samsung)

K9HDG08U5A - 32Gb A-die NAND Flash (Samsung)

K9HDG08UXB - 32Gb B-die NAND Flash (Samsung)

K9HDGD8S5M-B - FLASH MEMORY (Samsung)

TAGS

K9HBG08U1M Flash Memory Samsung Electronics