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K9HCG08U1D Datasheet - Samsung semiconductor

4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory

K9HCG08U1D Features

* Voltage Supply - 3.3V Device : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit

* Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte

* Page Read Operation - Page Size

K9HCG08U1D General Description

Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte page an.

K9HCG08U1D Datasheet (1.68 MB)

Preview of K9HCG08U1D PDF

Datasheet Details

Part number:

K9HCG08U1D

Manufacturer:

Samsung semiconductor

File Size:

1.68 MB

Description:

4g x 8 bit/ 8g x 8 bit/ 16g x 8 bit nand flash memory.
www.DataSheet.co.kr K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D Preliminary FLASH MEMORY K9XXG08UXD INFORMATION IN THIS DOCUMENT IS PROVIDED IN RE.

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TAGS

K9HCG08U1D Bit Bit 16G Bit NAND Flash Memory Samsung semiconductor

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