Description
Enterprise
Advance FLASH MEMORY
Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.The device is offered in 3.3V Vcc & VccQ.(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.Its NAND cell provides the most cost-effective solution for the solid state application market.A program operation can be performed in typical 2ms on the (8K+512)Byte page and an erase operation can be performed in typical 1.5ms on a (1M+64K
Features
- Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
- Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
- Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
- Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
- Fast Write Cycle Time - Page Program time.
