Part number: K9HDGD8X5M
Manufacturer: Samsung
File Size: 1.10MB
Download: 📄 Datasheet
Description: FLASH MEMORY
* Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
* Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) .
such as solid state file storage and other portable applications requiring nonvolatility.
1.2 FEATURES
* Voltage Su.
Enterprise
Advance FLASH MEMORY
Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The device is offered in 3.3V Vcc & VccQ. (3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfe.
TAGS
📁 Related Datasheet
K9HDGD8S5M-B - FLASH MEMORY
(Samsung)
K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M
Enterprise
Advance FLASH MEMORY
K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M
INFO.
K9HDGD8U5M-B - FLASH MEMORY
(Samsung)
K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M
Enterprise
Advance FLASH MEMORY
K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M
INFO.
K9HDG08U5A - 32Gb A-die NAND Flash
(Samsung)
www..net
Rev.1.0, May. 2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A
32Gb A-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTR.
K9HDG08UXB - 32Gb B-die NAND Flash
(Samsung)
SAMSUNG CONFIDENTIAL
Rev. 1.1, Sep. 2012 K9GBG08U0B K9LCG08U0B K9HDG08UXB
32Gb B-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRO.
K9HAG08U1M - Flash Memory
(Samsung)
www..com
K9HAG08U1M K9L8G08U0M K9MBG08U5M
Preliminary FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO S.
K9HBG08U1M - Flash Memory
(Samsung Electronics)
www..com
K9HBG08U1M K9LAG08U0M K9MCG08U5M
Advance FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU.
K9HCG08U1D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
(Samsung semiconductor)
www.DataSheet.co.kr
K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D
Preliminary FLASH MEMORY
K9XXG08UXD
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RE.
K9HCG08U1E - 16Gb E-die NAND Flash
(Samsung)
Rev. 0.9.1,Mar. 2010 K9GAG08U0E K9LBG08U0E K9HCG08U1E
Final
16Gb E-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERV.
K9HCG08U1M - FLASH MEMORY
(Samsung Electronics)
K9MDG08U5M K9LBG08U0M K9HCG08U1M
Preliminary www..com FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SA.
K9HCG08U5D - FLASH MEMORY
(Samsung)
.