K9HCG08U1M Datasheet (Samsung Electronics)

K9HCG08U1M, FLASH MEMORY

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

A program operation can be performed in typical 800µs on the 4,224-byte page and an erase operation can be performed in

K9MDG08U5M K9LBG08U0M K9HCG08U1M Preliminary www.DataSheet4U.com FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K9HCG08U1M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte

* Page Read Operation - Page Size : (4K + 128)Byt