Part number: K9HCG08U1M
Manufacturer: Samsung Electronics
File Size: 1.49MB
Download: 📄 Datasheet
Description: FLASH MEMORY
* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
* Automatic Program and Erase - Pa.
where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, .
Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,224-by.
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