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K9HCG08U1M - FLASH MEMORY

Samsung Electronics

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Datasheet Details

Part number: K9HCG08U1M
Manufacturer: Samsung Electronics
File Size: 1.49 MB
Datasheet: K9HCG08U1M_SamsungElectronics.pdf
Description: FLASH MEMORY

K9HCG08U1M Product details

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

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FLASH MEMORY Samsung Electronics

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