K9HCG08U1M Datasheet - Samsung Electronics

FLASH MEMORY

K9HCG08U1M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte

* Page Read Operation - Page Size : (4K + 128)Byt

K9HCG08U1M General Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,224-byte page and an erase operation can be performed in.

K9HCG08U1M Datasheet (1.49 MB)

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Datasheet Details

Part number:

K9HCG08U1M

Manufacturer:

Samsung Electronics

File Size:

1.49 MB

Description:

Flash memory.
K9MDG08U5M K9LBG08U0M K9HCG08U1M Preliminary www.DataSheet4U.com FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SA.

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K9HCG08U1M FLASH MEMORY Samsung Electronics

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K9HCG08U1M Features

K9HCG08U1M General Description

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