K9K1G08U0M-YIB0
Key Features
- Voltage Supply : 2.7V~3.6V
- Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by eight planes
- Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
- 528-Byte Page Read Operation - Random Access : 12µ s(Max.) - Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
- Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Te
