K9NBG08U5A Datasheet - Samsung semiconductor

(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

K9NBG08U5A Features

* Voltage Supply - 2.70V ~ 3.60V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

* Page Read Operation - Page Size : (2K + 64)Byte -

K9NBG08U5A General Description

Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed.

K9NBG08U5A Datasheet (1.23 MB)

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K9NBG08U5A

Manufacturer:

Samsung semiconductor

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1.23 MB

Description:

(k9xxg08uxa) 1g x 8 bit / 2g x 8 bit / 4g x 8 bit nand flash memory.
www.DataSheet4U.com K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU.

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K9NBG08U5A K9xxG08UxA Bit Bit Bit NAND Flash Memory Samsung semiconductor

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K9NBG08U5A Features

K9NBG08U5A General Description

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