KA100O015E-BJTT
KA100O015E-BJTT is 2CKE DDP Mobile DDR SDRAM manufactured by Samsung Semiconductor.
FEATURES
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- Operating Temperature : -25°C ~ 85°C
- Package : 137-ball FBGA Type
- 10.5 x 13 x 1.2mmt, 0.8mm pitch <NAND Flash>
- Voltage Supply
- 1.8V Device : 1.7V ~ 1.95V
- Organization
- Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP
- Data Register : (2K + 64) x 16bit
- Automatic Program and Erase
- Page Program : (2K + 64)Word
- Block Erase : (128K + 4K)Word
- Page Read Operation
- Page Size : (2K + 64)Word
- Random Read : 60μs(Max.) (TBD)
- Serial Access : 42ns(Min.)
- Fast Write Cycle Time
- Page Program time : 420μs(Typ.) (TBD)
- Block Erase Time : 3ms(Typ.) (TBD)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology -Endurance : TBD Program/Erase Cycles with 4bit/256Word ECC for x16
- mand Driven Operation
- Unique ID for Copyright Protection <Mobile DDR>
- VDD/VDDQ = 1.8V/1.8V
- Double-data-rate architecture; two data transfers per clock cycle.
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