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KA100O015E-BJTT

Manufacturer: Samsung Semiconductor

KA100O015E-BJTT datasheet by Samsung Semiconductor.

KA100O015E-BJTT datasheet preview

KA100O015E-BJTT Datasheet Details

Part number KA100O015E-BJTT
Datasheet KA100O015E-BJTT_Samsungsemiconductor.pdf
File Size 1.78 MB
Manufacturer Samsung Semiconductor
Description 2CKE DDP Mobile DDR SDRAM
KA100O015E-BJTT page 2 KA100O015E-BJTT page 3

KA100O015E-BJTT Overview

Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics.

KA100O015E-BJTT Key Features

  • Operating Temperature : -25°C ~ 85°C
  • Package : 137-ball FBGA Type
  • 10.5 x 13 x 1.2mmt, 0.8mm pitch <NAND Flash>
  • Voltage Supply
  • 1.8V Device : 1.7V ~ 1.95V
  • Organization
  • Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP
  • Data Register : (2K + 64) x 16bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Word
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