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  Samsung Electronic Components Datasheet  

KFG2G16Q2M Datasheet

2Gb OneNAND M-Die

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KFG2G16Q2M pdf
OneNAND2G(KFG2G16Q2M-DEBx)
OneNAND4G(KFH4G16Q2M-DEBx)
OneNAND8G(KFW8G16Q2M-DEBx)
FLASH MEMORY
www.DataSheet4U.com
KFG2G16Q2M
KFH4G16Q2M
KFW8G16Q2M
2Gb OneNAND M-die
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
OneNAND¥‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as
the property of their rightful owners.
* Samsung Electronics reserves the right to change products or specification without notice.
1


  Samsung Electronic Components Datasheet  

KFG2G16Q2M Datasheet

2Gb OneNAND M-Die

No Preview Available !

KFG2G16Q2M pdf
OneNAND2G(KFG2G16Q2M-DEBx)
OneNAND4G(KFH4G16Q2M-DEBx)
OneNAND8G(KFW8G16Q2M-DEBx)
Revision History
Document Title
OneNAND
FLASH MEMORY
Revision History
www.DataSheet4U.Rcoemvision No. History
0.0 1. Initial issue.
Draft Date
Mar. 30, 2006
0.1 1. Corrected errata.
Aug., 3, 2006
2. Changed a tem from MAT to Plane.
3. Chapter 1.4 & 2.3 & 8.0 : Revised the package size from 11x13 to 10x13.
4. Chapter 2.4 : Revised AVD pin description.
5. Chapter 2.8.3 : Eliminated ’Top boot’ option.
6. Chapter 2.8.12 & 2.8.16 & 3.8 : Added a. comment about FSA & FCSA
setting on Cache Read Operation
7. Chapter 2.8.18 : Added acceptible command during busy on Unlock,
Lock, Lock-tight, All block unlock and Erase suspend operation.
8. Chapter 3.1 : Eliminated ’read data from buffer’ and ’write data to buffer’
contents.
9. Chapter 3.3.1& 4.2 & 6.18 : Revised the bootcopy condtions.
10. Chapter 3.3 : Revised default value on Start Block Address with hot
reset.
11. Chapter 3.5 : Revised POR level into 1.5V and resetting guidance.
12. Chapter 3.11.1~3 : Added details and restrictions about 2X program and
2X Cache Program.
13. Chapter 3.11.3 & 6.16 : Revised mandatory codition which is ’INT auto
mode for 2X interleave Cache Program’ into manually writable INT cond-
tion as 2X Program or 2X Cache Program.
14. Chapter 3.13.2 : Eliminated the expression ’suspended’ on Case 2.
15. Chapter 3.14.1 : Revised Note 1 on OTP load flow chart.
16. Chapter 4.3 : Revised Load/Program/Erase current value and added
"2X Program current" item.
17. Chapter 5.4 : Revised tBDH(into 2ns on 83Mhz) and tAVDH(into 2ns on
66/83Mhz).
18. Chapter 5.8 : Revised tAVDH(into 2ns on 66/83Mhz)
19. Chapter 5.10 : Revised tWB table.
20. Chapter 5.11 : Revised tINTL table and its value.
21. Chapter 6.11 : Added "Start Initial Burst Write Operation" timing.
22. Chapter 6.22 : Revised timing diagram.
1.0 1. Corrected errata.
Sep. 20, 2006
2. Chapter 3.1 : Added restrictions of command based operation on DDP.
3. Chapter 3.5 & 6.22 : Corrected data protection explanation during power-
down.
4. Chapter 7.1 & 7.1.2 : Added the case table of INT type and comment
regarding INT pin connection when unused.
5. Chapter 7.1.3 : Corrected INT behavior graphs.
Remark
Advanced
Preliminary
Final
2


Part Number KFG2G16Q2M
Description 2Gb OneNAND M-Die
Maker Samsung semiconductor
Total Page 30 Pages
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