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M366S1654CTS - PC133/PC100 Unbuffered DIMM

Description

The Samsung M366S1654CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

Features

  • ITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Unit V V ns V 1200Ω Output 870Ω.
  • 50pF VOH (DC) = 2.4V, IOH = -2mA VOL (DC) = 0.4V, IOL = 2mA Output Z0 = 50Ω.
  • 50Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com M366S1654CTS M366S1654CTS SDRAM DIMM PC133/PC100 Unbuffered DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S1654CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1654CTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S1654CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.
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